2N6609 TIN/LEAD

Manufacturer :

Central Semiconductor

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

160 V

Collector- Emitter Voltage VCEO Max :

140 V

Collector-Emitter Saturation Voltage :

1.4 V

Configuration :

Single

Emitter- Base Voltage VEBO :

7 V

Gain Bandwidth Product fT :

4 MHz

Maximum DC Collector Current :

30 A

Maximum Operating Temperature :

+ 200 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

Through Hole

Package / Case :

TO-3-2

Packaging :

Tube

Pd - Power Dissipation :

150 W

Series :

2N6609

Transistor Polarity :

PNP