NSV20101JT1G

Manufacturer :

onsemi

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

40 V

Collector- Emitter Voltage VCEO Max :

20 V

Configuration :

Single

Emitter- Base Voltage VEBO :

6 V

Gain Bandwidth Product fT :

350 MHz

Maximum DC Collector Current :

2 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

SC-89-3

Packaging :

Reel

Pd - Power Dissipation :

300 mW

Qualification :

AEC-Q101

Series :

NSS20101J

Transistor Polarity :

NPN