HN1C03FU-B,LF
- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 20 V
- Collector-Emitter Saturation Voltage :
- 0.042 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 25 V
- Gain Bandwidth Product fT :
- 30 MHz
- Maximum DC Collector Current :
- 300 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- US-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Qualification :
- AEC-Q101
- Series :
- HN1C03
- Transistor Polarity :
- NPN
- Datasheets
- HN1C03FU-B,LF
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