HN2A01FU-Y(TE85L,F

Manufacturer :

Toshiba

Product Category :

Bipolar Transistors - BJT

Collector- Base Voltage VCBO :

50 V

Collector- Emitter Voltage VCEO Max :

50 V

Collector-Emitter Saturation Voltage :

0.1 V

Configuration :

Dual

Emitter- Base Voltage VEBO :

5 V

Gain Bandwidth Product fT :

80 MHz

Maximum DC Collector Current :

150 mA

Maximum Operating Temperature :

+ 125 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Package / Case :

US-6

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

200 mW

Series :

HN2A01

Transistor Polarity :

PNP