- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- - 120 V
- Collector- Emitter Voltage VCEO Max :
- - 120 V
- Collector-Emitter Saturation Voltage :
- - 0.3 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- - 100 mA
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-25-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Series :
- HN4A51
- Transistor Polarity :
- PNP
- Datasheets
- HN4A51JTE85LF
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN4A06J(TE85L,F) | Toshiba | 10,334 | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A |
| HN4A56JU(TE85L,F) | Toshiba | 889 | Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz |
