HN1B01FU-GR,LF

Mfr.Part #
HN1B01FU-GR,LF
Manufacturer
Toshiba
Package/Case
SOT-363-6
Datasheet
Download
Description
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

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Manufacturer :
Toshiba
Product Category :
Bipolar Transistors - BJT
Collector- Base Voltage VCBO :
60 V, - 50 V
Collector- Emitter Voltage VCEO Max :
50 V
Collector-Emitter Saturation Voltage :
100 mV
Configuration :
Dual
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
150 MHz, 120 MHz
Maximum DC Collector Current :
150 mA
Maximum Operating Temperature :
+ 125 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-363-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
200 mW
Qualification :
AEC-Q101
Series :
HN1B01
Transistor Polarity :
NPN, PNP
Datasheets
HN1B01FU-GR,LF

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