- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 60 V, - 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 100 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 150 MHz, 120 MHz
- Maximum DC Collector Current :
- 150 mA
- Maximum Operating Temperature :
- + 125 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Qualification :
- AEC-Q101
- Series :
- HN1B01
- Transistor Polarity :
- NPN, PNP
- Datasheets
- HN1B01FU-GR,LF
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HN1B01FDW1T1G | onsemi | 2,360 | Bipolar Transistors - BJT 200mA 60V Dual Complementary |
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HN1B01FU-Y,LXHF | Toshiba | 0 | Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6) |
HN1B04FE-GR,LF | Toshiba | 436 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
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HN1B04FE-Y,LF | Toshiba | 4,338 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
HN1B04FE-Y,LXHF | Toshiba | 0 | Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6) |
HN1B04FU-GR,LF | Toshiba | 1,975 | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
HN1B04FU-GR,LXHF | Toshiba | 0 | Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6) |
HN1B04FU-Y,LF | Toshiba | 320 | Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V |
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