Images are for reference only.

HN1C01FE-GR,LF

DF2B5BSL,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
DF2B7PCT,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
DF2B5PCT,L3F

Toshiba

ESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
DF2S5M5SL,L3F

Toshiba

ESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
DF2S6P2CTC,L3F

Toshiba

ESD Suppressors / TVS Diodes ESD protection diode 80A +/-30kV

MSR2N3501UB

Microchip Technology

Bipolar Transistors - BJT RH Small-Signal BJT
BC856B,215

Nexperia

Bipolar Transistors - BJT PNP GP 100MA 65V
BCM61B,215

Nexperia

Bipolar Transistors - BJT Trans GP BJT NPN 45V 0.1A 4pin(3+Tab)
PBSS4021PX,115

Nexperia

Bipolar Transistors - BJT Single PNP -20V -6.2A 600mW 105MHz
BC817K-25R

Nexperia

Bipolar Transistors - BJT TRANS BIPOLAR

Part	Manufacturer	Stock	Description
HN1C01F-GR(TE85L,F	Toshiba	7,355	Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
HN1C01FE-GR,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
HN1C01FE-Y,LF	Toshiba	4,000	Bipolar Transistors - BJT Transistor for Small Signal Amp
HN1C01FE-Y,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
HN1C01FU-GR,LF	Toshiba	74	Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
HN1C01FU-GR,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6)
HN1C01FU-Y,LF	Toshiba	4,798	Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package
HN1C01FU-Y,LXHF	Toshiba	0	Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-363 (US6)
HN1C01FYTE85LF	Toshiba	8,669	Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
HN1C03F-B(TE85L,F)	Toshiba	6,099	Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, SM6
HN1C03FU-A(TE85L,F	Toshiba	0	Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
HN1C03FU-B(TE85L,F	Toshiba	747	Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6
HN1C03FU-B,LF	Toshiba	3,000	Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package