- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- - 50 V
- Collector- Emitter Voltage VCEO Max :
- - 50 V
- Collector-Emitter Saturation Voltage :
- - 0.1 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- - 150 mA
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Series :
- HN2A01
- Transistor Polarity :
- PNP
- Datasheets
- HN2A01FU-GR(TE85LF
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Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN2A01FU-Y(TE85L,F | Toshiba | 2,272 | Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A |
